| 摘要 |
Method for producing a hole mask having slit-like openings, comprising the sequence of steps of exposure, development, drying, baking and etching, applied to an elongated hole-mask material having with a photoresist layer situated thereon, the exposure step being combined with a step for producing a shape of a photoresist layer, on which a multiplicity of slit-like figures are drawn, on the hole-mask material, so as to form a wedge-like expansion outwards from a central part to a rear region of the material. |
