STATIC RANDOM ACCESS MEMORY DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce contact resistance and to simplify a manufacturing process by constituting a unit active area of an annular first active area and a second active area bisecting the first active area so as to increasing a contact hole for a power line without increasing the size of a cell. SOLUTION: A unit active area is constituted of an annular first active area and a second active area bisecting first active area. In addition unit active areas are arranged so as to repeat a first column where the unit active areas are arrayed and a second column where unit active areas are arranged to be deviated respectively by 1/2 pitch from the unit active areas arrayed in the first column. Then four cells share the unit active areas of them respectively by 1/4. In addition contact holes C for connecting a power source line to active areas are formed on the second active areas and the four cells share one contact hole C.