| 发明名称 |
Production of semiconductor single crystals in Czochralski apparatus comprises subjecting melt to ultrasound through recess in crucible base during crystal growing |
| 摘要 |
Production of single crystals in a Czochralski apparatus comprises subjecting the melt to ultrasound through a recess in the crucible base during crystal growing.
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| 申请公布号 |
DE19902302(A1) |
申请公布日期 |
2000.07.27 |
| 申请号 |
DE1999102302 |
申请日期 |
1999.01.21 |
| 申请人 |
SYNTHESECHEMIE GMBH |
发明人 |
KOZHEMYAKIN, GENNADIY NIKOLAEVICH |
| 分类号 |
C30B15/00;C30B15/30 |
主分类号 |
C30B15/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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