| 摘要 |
PROBLEM TO BE SOLVED: To prevent a substance for increasing leakage current of a capacitor such as moisture or an organic substance from being included in a capacitance insulation film in forming the capacitor. SOLUTION: A method of manufacturing a semiconductor device includes a step of forming a capacitor housing insulation film 14 on an upper part of a silicon substrate, a step of forming films of a lower electrode 16, the capacitance insulation film 17 made of metal oxide and an amorphous upper electrode 18 sequentially on a surface of the insulation film 14, and a step of annealing the upper electrode 18 and the capacitance insulation film 17 in an oxidizing gas atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
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