ISOLATION TRENCH WITH ROUNDED CORNERS FOR BICMOS PROCESS
摘要
<p>A semiconductor device comprising a first transistor device (130) on or in a semiconductor substrate (115) and a second transistor device (132) on or in the substrate. The device further comprises an insulating trench (200) located between the first transistor device and the second transistor device. At least one upper corner (610) of the insulating trench is a rounded corner in a lateral plane of the substrate.</p>
申请公布号
WO2009052156(A2)
申请公布日期
2009.04.23
申请号
WO2008US79959
申请日期
2008.10.15
申请人
TEXAS INSTRUMENTS INCORPORATED;PENDHARKAR, SAMEER, P.;LIN, JOHN;HOWER, PHILIP, L.;MERCHANT, STEVEN, L.
发明人
PENDHARKAR, SAMEER, P.;LIN, JOHN;HOWER, PHILIP, L.;MERCHANT, STEVEN, L.
