发明名称 |
METHOD OF FORMING POLARIZATION REVERSAL AREA, METHOD OF MANUFACTURING PSEUDO PHASE MATCHING ELEMENT AND PSEUDO PHASE MATCHING ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming polarization reversal area capable of enhancing nuclear density of polarization reversal at a low cost. SOLUTION: The method of forming polarization reversal area includes: a process of partially forming an insulation body 320 on a first area 120 which is located on a first surface of a ferroelectric crystal substrate 100 and is polarization-reversed; a process of forming a first electrode 242 on the first area 120 and on the insulation body 320; and a process of turning the first area 120 into the polarization reversal area 124 by applying a voltage between a second electrode 220 and the first electrode 242 formed on the second surface as an opposite surface to the first surface. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010019994(A) |
申请公布日期 |
2010.01.28 |
申请号 |
JP20080179238 |
申请日期 |
2008.07.09 |
申请人 |
FUJI ELECTRIC HOLDINGS CO LTD |
发明人 |
KUNIHARA KENJI |
分类号 |
G02F1/37 |
主分类号 |
G02F1/37 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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