| 摘要 |
PROBLEM TO BE SOLVED: To equalize etching grate distribution by plasma etching. SOLUTION: This device is provided with an electrode 20, on which a semiconductor substrate 100 is placed, an electrode 10 arranged so as to face the electrode 20, and a high-frequency power source 40 which applies high-frequency voltage between the electrode 10 and the electrode 20, and a plasma 11b of etching gas 11a is formed between the electrode 10 and the electrode 20 by the high-frequency power, and the dry etching of the surface of the semiconductor substrate 100 exposed to the plasma 11b is carried out. In this case, a conductive ring 50 is arranged, and the electrode 20 on which the semiconductor substrate 100 is placed can be surrounded, and this conductive ring 50 is connected via a capacitor 60 whose capacity is variable with respect to a high-frequency power source 40, and the distribution range of the plasma 11b is widened to the outside of the semiconductor substrate 100, so that the whole part of the semiconductor substrate 100 can be included in the safety region of the etching reaction by the plasma 11b. Thus, the etching rate of each part of the semiconductor substrate 100 can be made uniform. |
