| 摘要 |
PURPOSE:To make the resistance value easy to set and variable, by providing electrodes in a first layer of second-conductivity type and a second layer of second-conductivity type, and providing other two electrodes, which hold the second layer of second- conductivity type in the first-conductivity type substrate surrounded by the first layer of second-conductivity type and an embedded layer. CONSTITUTION:On an p<-> type Si semiconductor substrate 1, an n<-> type Si layer 2 is formed by epitaxial growing. An n<+> embedded layer 3 is buried between the substrate 1 and the layer 2. P<+> embedded layers 4 and 5 are formed by implanting p<-> type impurity ions in the surface of the substrate 1 and diffusing the ions in the n-layer after the formation of the epitaxial n<-> layer. A p<+> diffused layer 6 is formed by partially implanting and diffusing ions from the surface of the epitaxial (n) layer. The layer is connected to the embedded layers 4 and 5, and element isolating layers 6 and 5 are formed. A (p) diffused layer 7 is formed on the surface of an (n) layer 2 ', which is to become a resistor region. n<+> diffused layers 8 and 8 are made to be electrode lead-out parts. Thus, the resistor, in which the resistance value can be readily set, and which can be used as a variable resistor by the application of a voltage to the diffused layer 7, can be provided. |
