| 摘要 |
A semiconductor device having a recess channel and a manufacturing method thereof are provided to secure an effective cell data writing time and to improve a cell driving current property by forming a floor surface of a recess trench with a dual fin structure. A semiconductor substrate(100) includes an isolation film which defines an active region including a channel region and a junction region. A recess trench includes a first trench and a second trench. The first trench is formed inside the channel region of the semiconductor substrate. The second trench is formed from a floor surface of the first trench, and has smaller width than the first trench. A gate stack(205) is overlapped with the recess trench, and crosses the active region. Height of the isolation film adjacent to the channel region is relatively lower than height of the isolation film adjacent to the junction region of the active region.
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