| 摘要 |
PURPOSE:To adopt a numerous barrier metal by forming a barrier metallic layer having tight adhesive property with Si to the window of SiO2 on a Si substrate, stacking a metallic layer and shaping a metallic layer for an overoxide having tight adhesive property with the metallic layer and the SiO2 film and no soldering property with them onto the outer circumference of the metallic layer and SiO2 contacting with the outer circumference. CONSTITUTION:The barrier metals (such as Pt, Pd, Ir, Zn) 3, 3' having thgit adhesive property with Si and non-adherent property with SiO2 are evaporated to the window of the SiO2 film 2 on a Si substrate 1, Cu, Ni, etc. having excellent soldering property are thickly laminated 4, 4', Au 5, 5' is stacked, and oxidation is prevented. The metallic layers 3'-5' on the SiO2 2 are simply peeled off and removed through ultrasonic washing. The metal (such as Al, Cr) 6 for the overoxide having tight adhesive property with the metallic layer and SiO2 and non-soldering property with them is evaporated, and left selectively to the outer circumference of the metallic layer and the overoxide section through photoetching. In this constitution, photoetching may be conducted at a time because it is determined only by tight adhesive property with the SiO2 of the metal 6. Solder does not adhere to the fringe, and a numerous barrier metal can be adopted. |
