METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To protect Cu damascene wiring against erosion. SOLUTION: Slurry contains potassium persulfate as an oxidizing agent, potassium dodecyl benzenesulfonate as an surface-active agent, and silica as abrasive particles and pH controlled to 8 by adding potassium hydroxide, and an unwanted Cu film 5 located outside a wiring groove 3 is removed through a CMP method by the use of the slurry.