Al/Ti layered interconnection and method of forming the same

摘要

In order to provide an Al/Ti layered interconnection which comprises a Ti (titanium) layer and an Al layer composed of Al (aluminum) or an Al alloy both formed over a base in this order and is capable of retarding a reaction between Ti and Al and preventing pinholes from occurring, the present invention is characterized as follows: The Al layer contains Si (silicon) in a portion adjacent to the Ti layer in a concentration capable of retarding an interface reaction between Ti and Al. Further, the concentration of Si in an Al layer portion on the side above the adjacent portion is set to a concentration lower than a concentration for allowing the upper Al layer portion to produce pinholes even at the maximum.