发明名称 Gas treatment apparatus
摘要 A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.
申请公布号 US2001000198(A1) 申请公布日期 2001.04.12
申请号 US20000735627 申请日期 2000.12.14
申请人 TOKYO ELECTRON LIMITED 发明人 TAKESHITA KAZUHIRO;NAGASHIMA SHINJI;MIZUTANI YOJI;KATAYAMA KYOSHIGE
分类号 B05D1/00;B05D3/04;H01L21/00;(IPC1-7):C23C16/00 主分类号 B05D1/00
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