Method of fabricating a bi-CMOS device

摘要

A process for fabricating a CMOS compatible bipolar transistor is described. The transistor, which is of the polysilicon emitter type, is fabricated by forming a p-type layer in a well, providing a polysilicon emitter in contact with the layer, using the emitter as a mask to implant p+-type base contact regions, and applying contacts to the device.