| 摘要 |
PURPOSE:To execute growth of good ON-OFF controllability of molecular beam in the titled process using an organometallic compd. as a starting material by cooling and capturing the organometallic compd. with a shutter provided between a substrate crystal and a gas-introducing cell. CONSTITUTION:For example, a rotary shaft 2, liquid nitrogen reservoir 3, introducing or discharging pipe 4, 5 for liquid nitrogen, flange 6, metallic vessel 7, cylinder 8 for contg. In(C2H5)3, and variable leak valves 9, 9' are provided to the titled growth device using an organometallic compsd. as a startin material. Further, a thermal decomposition cell for PH3, substrate holder 11, cyliner 12 contg. PH3, quadrupole mass spectrograph 13, nude ion gauge 14, and a vacuum pump 15 for ventillation are also provided to the device. If liquid nitrogen is introduced from outside through the pipe 4 and the surface of the vessel 7 is cooled, the shutter shields the molecular beam from In(C2H5)3. Therefore, when epitaxial growth of InP is executed, the growth of InP thin film is commenced by opening the shutter while liquid nitrogen is introduced into the vessel 7, and the crystal growth is stopped by closing the shutter. |
