| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a composite function on which a semiconductor element and a circuit are loaded as a compact and highly reliable product. SOLUTION: Wiring patterns 22b and 22c are formed through electric insulating layers 32a and 32b on a core substrate 20, and wiring patterns 22a, 22b, and 22c are electrically connected between layers in this semiconductor device. In this case, a thinner semiconductor element 12 than that of the electric insulating layers 32a and 32b is electrically connected with the wiring patterns 22a, 22b, and 22c by flip chip connection and loaded on an inner layer in which the wiring patterns 22a, 22b, and 22c are formed. |
