| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor of a high-speed operation in which parasitic capacitance between a gate electrode and source-drain regions is reduced by establishing a resistance decreasing processing method different from a conventional method and utilizing both the resistance decreasing method and another resistance decreasing method to form source-drain regions having sufficiently decreased resistance, and to suppress the occurrence of current rate limiting by decreasing parasitic resistance from the source-drain regions to a channel. <P>SOLUTION: The thin-film transistor has an oxide semiconductor thin film layer principally containing zinc oxide (ZnO) and to be formed as a channel on an insulating substrate; a gate insulating film to be formed on the oxide semiconductor thin film layer; a gate electrode stacked on the gate insulating film; and an interlayer insulating film for covering at least a range not covered with the gate insulating film of the oxide semiconductor thin film layer. In the transistor, the gate insulating film and the gate electrode are self-alignedly formed into the same shape, and hydrogen is contained in the interlayer insulating film. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
