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发明名称
SEMICONDUCTOR DEVICES WITH CURRENT SHIFTING REGIONS AND RELATED METHODS
摘要
반도체 장치는 제1 도전형을 갖는 반도체 버퍼층 및 버퍼층의 표면 상의 제1 도전형을 갖는 반도체 메사를 포함할 수 있다. 또한, 전류 시프팅 영역이 반도체 메사와 반도체 버퍼층 사이의 코너에 인접하게 제공될 수 있으며, 제1 및 제2 도전형들은 상이한 도전형들일 수 있다. 관련 방법들도 설명된다.
申请公布号
KR101630895(B1)
申请公布日期
2016.06.15
申请号
KR20117015106
申请日期
2009.11.20
申请人
크리, 인코포레이티드
发明人
장, 칭춘;아가왈, 아난트, 케이.
分类号
H01L29/06;H01L29/73;H01L29/744
主分类号
H01L29/06
代理机构
代理人
主权项
地址
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