| 摘要 |
PROBLEM TO BE SOLVED: To provide a high voltage element in which breakdown voltage characteristic can be enhanced and the degree of integration can be enhanced by reducing the element size, and its manufacturing method. SOLUTION: A drift region and a source/drain ion implanted region are formed on the surface part of a substrate, a trench is made deeper than the drift region in the substrate and a channel 36 is formed along the bottom face part of the trench. A conductive films 38a for buffer is formed on the opposite sides of the trench while being separated and a gate electrode 42a is formed in between through an insulation film. |
