Apparatus and methods including source gates

摘要

Apparatus and methods are disclosed, such as an apparatus that includes a string of charge storage devices associated with a pillar (e.g., of semiconductor material), a source gate device, and a source select device coupled between the source gate device and the string. Additional apparatus and methods are described.

主权项

1. A method for operation of a memory device, the method comprising:
biasing a common source to 0 volts; turning on a first source select gate coupled to a selected string of charge storage devices; turning off a second source select gate coupled to an unselected string of charge storage devices; turning on a source gate coupled to both the selected and unselected string of charge storage devices; biasing, with a read voltage, a selected access line coupled to a selected charge storage device in the selected string of charge storage devices; biasing a plurality of unselected access lines to a voltage greater than the read voltage, the unselected access lines coupled to charge storage devices not being read; and biasing a slot, coupled to a semiconductor well of the selected and unselected string of charge storage device, with 0 volts.