发明名称 FORMATION METHOD OF ION INJECTION LAYER
摘要 PURPOSE:To obtain an injection layer which holds a good crystallization performance by formaing the high density region of the second impurity to be injected into the crystal shallower than the distribution region of the first impurity and then securing a free diffusion for the first impurity.
申请公布号 JPS545653(A) 申请公布日期 1979.01.17
申请号 JP19770071236 申请日期 1977.06.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 YUKIMOTO YOSHINORI
分类号 C30B31/22;H01L21/265;H01L21/324 主分类号 C30B31/22
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