| 摘要 |
PURPOSE:To easily form lateral p-n junction, in crystal growth method for a compound semiconductor, wherein a reaction tube of gas phase growth device is not stained so that no bad effect is given to crystal growth at next time, without utilizing singular diffusion of impurities. CONSTITUTION:On an n-GaAs substrate 31, a groove 31A is formed, and on the n-GaAs substrate 31, n-type semiconductor layers 32 of thickness tn and p-type semiconductor layers 33 of thickness tp are laminated both alternately and as follows. Wn=(2epsilonsDEgNp/(q(Nn<2>+NnNp)))<1/2>. Wp=(2epsilonsEgNn/(q(Np<2>+ NnNp)))<1/2>. W=Wn+Wp (W: entire void layer width, Wn: void layer width extending into n side, Wp: void layer width extending into p side). Further from the void layer width, Wn and Wp, decided by above equations, following relationship shall be obtained. tn>2Wn and tp<2Wp or tp>2Wp and tn<2Wn. |
