发明名称 |
Substrate processing apparatus and substrate processing method |
摘要 |
A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2). A pure water supply system (11) including pure water supply port and a draining unit (12) including a drain pipe-line (141) through which pure water is drained are combined with the second processing chamber (4).
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申请公布号 |
US2001045224(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US20010912964 |
申请日期 |
2001.07.25 |
申请人 |
KAMIKAWA YUJI;KITAHARA SHIGENORI;UENO KINYA |
发明人 |
KAMIKAWA YUJI;KITAHARA SHIGENORI;UENO KINYA |
分类号 |
H01L21/304;H01L21/00;(IPC1-7):B08B3/04 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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