METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor element is provided to improve performance of semiconductor unit and reduce parasitic current between adjacent elements by reducing resistance of the semiconductor unit. CONSTITUTION: A pad oxide layer(32) and a nitride layer(33) are formed successively on a silicon plate(31). A silicon trench(31a) is formed by etching the pad oxide layer(32) and the nitride layer(33). After a first insulation layer(34) is formed on the entire surface, it is flattened with CMP(chemical mechanical polishing) until the surface of the nitride layer(33) is exposed. The flattened nitride layer is removed. A first insulation film that separates elements is formed by etching the insulation layer(34) with a photosensitive film pattern. After the photosensitive film pattern is removed, a polysilicon layer with protrusion and groove is formed on the entire surface. The polysilicon layer is etched with CMP until polysilicon layer filled in the groove and the first insulation film are exposed. A gate electrode consisting of polysilicon is formed on the protrusion of the plate(31). Source region and drain region are formed on the protrusion of the plate(31). High melting point silicide layer is formed on the gate electrode, source region and drain region. A second insulation layer is formed on the entire plate(31). The second insulation layer is etched to form contact holes exposing the high melting point silicide layer. Metallic substance is deposited to form wiring.