| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface light-emission type semiconductor laser wherein the occurrence of interface levels between an embedded layer and an active layer is suppressed or reduced. SOLUTION: This method of manufacturing the layer comprises a process of forming a plurality of semiconductor layers on a substrate 102, a process of forming at least one pillar-like semiconductor layer by etching layer part of the semiconductor layer including at least a clad layer 105 using a mask 113, a process of epitaxially growing a II-VI compound semiconductor around the pillar-like semiconductor layer to form an embedded layer 109, and a process of rinsing the layer surface before the process of forming the embedded layer 109.
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