发明名称 MULTILAYER SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To suppress a connection failure of a bonding wire or a crack of the semiconductor element in the upper side due to a hollow part under the projection of the semiconductor element in the upper side, in a laminate structure in which part of a semiconductor element in the upper side is projected outward from the periphery of a semiconductor element in the lower side. SOLUTION: A multilayer semiconductor device 1 comprises: a first semiconductor element 5 adhered to a circuit board 2; and a second semiconductor element 8 laminated on the first semiconductor element 5, and having a projection 8a outward from the periphery of the first semiconductor element 5. The second semiconductor element 8 is adhered to the first semiconductor element 5 through an insulating resin having resin property represented by a product of the viscosity (Pa s) and the thixo ratio of 700 or more, and the hollow part is filled with an insulating resin between the projection 8a of the second semiconductor element 8 and the circuit board 2. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007324443(A) 申请公布日期 2007.12.13
申请号 JP20060154407 申请日期 2006.06.02
申请人 TOSHIBA CORP 发明人 YOSHIMURA ATSUSHI;DOI MASAYUKI
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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