| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel variable resistive element applicable to a resistance change type memory. SOLUTION: This variable resistive element 10 includes a first electrode 12, a resistor layer 14 formed on the first electrode 12, and a second electrode 16 formed on the resistor layer 14. The resistor layer 14 is made of a transition metal oxide represented by Y<SB>x</SB>Ti<SB>1-x</SB>O<SB>2</SB>(0≤x<1), and the transition metal oxide has an oxygen failure. COPYRIGHT: (C)2008,JPO&INPIT
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