发明名称 |
ACTIVE SEMICONDUCTOR BACKPLANE |
摘要 |
An active semiconductor backplane is disclosed comprising an array of addressable active elements (52) on a semiconductor substrate (51) for selectively energising respective first electrodes (65) of the array, for example in a liquid crystal matrix cell. To reduce photo-induced degradation of images produced thereby (a) at least part of the region beneath a first electrode is adapted to act as a capacitor, for example a depletion layer (66) acting as a reverse biased diode, and/or (b) substantially the whole of each active element is covered by a metallic conductor (59, 60 - coupled to row and column conductors). In a variant of (b) the array of active elements may be covered by an insulating layer, and each active element is connected to a metal electrode on the insulating layer, the array of said metal electrodes thus formed covering more than 65 % of the area of said array.
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申请公布号 |
WO0037999(A1) |
申请公布日期 |
2000.06.29 |
申请号 |
WO1999GB04279 |
申请日期 |
1999.12.16 |
申请人 |
THE SECRETARY OF STATE FOR DEFENCE;CROSSLAND, WILLIAM, ALDEN;YU, TAT, CHI, B. |
发明人 |
CROSSLAND, WILLIAM, ALDEN;YU, TAT, CHI, B. |
分类号 |
G02F1/1368;G02F1/1362;G09F9/30;G09F9/35;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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