发明名称 |
SEMICONDUCTOR ARRANGEMENT COMPRISING A PN-TRANSITION AND METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT |
摘要 |
A semiconductor system having a pn transition and a method for manufacturing a semiconductor system are disclosed. The semiconductor system is designed in the form of a chip having an edge region, the semiconductor system includes a first layer of a first conductivity type and a second layer of a second conductivity type, which is of opposite polarity to the first conductivity type. The first layer has an edge region and a center region, the pn transition being provided between the first layer and the second layer. The second layer is more weakly doped in its edge region than in its center region, and the boundary surface of the pn transition at the edge region is non-parallel to the main chip plane. |
申请公布号 |
EP1468454(A1) |
申请公布日期 |
2004.10.20 |
申请号 |
EP20020787381 |
申请日期 |
2002.11.19 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
MARTIN LOPEZ, MARIA DEL ROCIO;SPITZ, RICHARD;GOERLACH, ALFRED;WILL, BARBARA |
分类号 |
H01L21/329;H01L29/866 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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