发明名称 |
Forming method of contact hole, and manufacturing method of semiconductor device, liquid crystal display device and EL display device |
摘要 |
When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.
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申请公布号 |
US2005170643(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050038068 |
申请日期 |
2005.01.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
FUJII GEN;SHIROGUCHI HIROKO |
分类号 |
H01L29/786;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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