发明名称 Forming method of contact hole, and manufacturing method of semiconductor device, liquid crystal display device and EL display device
摘要 When forming a contact hole by a conventional manufacturing step of a semiconductor device, a resist is required to be formed on almost entire surface of a substrate so as to be applied on a film other than an area in which a contact hole is to be formed, leading to drastically reduced throughput. According to a forming method of a contact hole and a manufacturing method of a semiconductor device, an EL display device and a liquid crystal display device of the invention, an island shape organic film is selectively formed over a semiconductor layer, a conductive layer or an insulating layer, and an insulating film is formed around the island shape organic film to form a contact hole. Therefore, a conventional patterning using a resist is not required, and high throughput and low cost can be achieved.
申请公布号 US2005170643(A1) 申请公布日期 2005.08.04
申请号 US20050038068 申请日期 2005.01.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJII GEN;SHIROGUCHI HIROKO
分类号 H01L29/786;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;(IPC1-7):H01L21/00 主分类号 H01L29/786
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