| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser which has low element resistance and is suitable for high-speed modulation. SOLUTION: The laser is provided with a lower DBR (distributed bragg reflector) mirror layer 11 and an upper DBR mirror layer 15 with an active layer 13 sandwiched. The laser also has a current constriction layer 15C in one part of layers forming the DBR mirror layer 15. The vicinity of the current constriction layer 15C has an impurity concentration lower than an average concentration of the DBR mirror layer 15. In this way, in the vicinity of the layer 15C having the low impurity concentration, a current flowing in a direction perpendicular to a laminated direction can be made to flow in a region having a high electric conductivity, e.g. a region having less electric resistance. COPYRIGHT: (C)2006,JPO&NCIPI
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