| 摘要 |
In a method for dry-etching a multilayer film which contains a titanium nitride film and which is formed on a silicon dioxide layer, after the multilayer film is etched by using a Cl2/BCl3/CHF3 gas while using a resist as a mask, but before the resist is ashed for removal of the resist, an overetching is carried out using a gas containing at least 50% of SF6, thereby to elevate removability of the resist by the ashing.
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