发明名称 |
Förfarande för tillverkning av kiselgivare samt kiselgivare |
摘要 |
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer ( 10 ) is formed by etched openings at least one spring element configuration ( 7 ) and at least one seismic mass ( 8 ) connected to said spring element configuration ( 7 ). According to the invention, the openings and trenches ( 8 ) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration ( 7 ) is based on wet etch methods. |
申请公布号 |
FI20010582(A) |
申请公布日期 |
2002.09.22 |
申请号 |
FI20010000582 |
申请日期 |
2001.03.21 |
申请人 |
VTI HAMLIN OY, |
发明人 |
KUISMA,HEIKKI;LAHDENPERAE,JUHA;MUTIKAINEN,RISTO |
分类号 |
G01P15/00;B81B3/00;B81C1/00;G01P15/08;H01L21/306;H01L21/3065;H01L29/84;(IPC1-7):B81C |
主分类号 |
G01P15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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