发明名称 CURRENT CONSUMPTION REDUCTION CIRCUIT FOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the current consumption, to stabilize the test time action of a memory device and to improve the reliability in a test, by providing current control blocks in respective bit memory means, controlling currents of respective main amplifiers according to a normal mode and a test mode and reducing the currents at the test mode time. SOLUTION: In the test mode, a test mode decision signal RMAT is outputted, and respective NMOS transistors N11-N13 of first, second current control circuits 241, 242 constituting a current control block are turned off. A free charge circuit 221 is operated by equalization signals EQB, EQ, and respective input terminals CIOT, CIOB are equalized. Further, a read enable signal is outputted from a signal amplifier part in all enable, and the first, second differential amplifier circuits 222, 223 of the main amplifiers in a signal amplifier block are all operated. However, since their currents flow through only NMOS transistors N3, N6, N9 side, to be limited.
申请公布号 JPH10326499(A) 申请公布日期 1998.12.08
申请号 JP19980094367 申请日期 1998.04.07
申请人 LG SEMICON CO LTD 发明人 DON-CHURU RIM
分类号 G01R31/28;G11C11/401;G11C11/407;G11C11/409;G11C29/02;G11C29/12;G11C29/50;(IPC1-7):G11C29/00 主分类号 G01R31/28
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