| 发明名称 |
Semiconductor device and manufacturing method of the same |
| 摘要 |
A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND<SUB>3 </SUB>gas.
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| 申请公布号 |
US2005170666(A1) |
申请公布日期 |
2005.08.04 |
| 申请号 |
US20040999937 |
申请日期 |
2004.12.01 |
| 申请人 |
SEKINE KATSUYUKI;TSUNASHIMA YOSHITAKA;INUMIYA SEIJI;KANEKO AKIO;SATO MOTOYUKI;EGUCHI KAZUHIRO |
发明人 |
SEKINE KATSUYUKI;TSUNASHIMA YOSHITAKA;INUMIYA SEIJI;KANEKO AKIO;SATO MOTOYUKI;EGUCHI KAZUHIRO |
| 分类号 |
H01L21/316;H01L21/314;H01L29/78;(IPC1-7):H01L21/31;H01L21/22;H01L21/425;H01L21/469 |
主分类号 |
H01L21/316 |
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