Process for producing silicon single crystal layer and silicon single crystal layer,申请号KR20047013821-传众专利搜索

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发明名称	Process for producing silicon single crystal layer and silicon single crystal layer
摘要
申请公布号	KR100712057(B1)	申请公布日期	2007.05.02
申请号	KR20047013821	申请日期	2003.03.05
申请人		发明人
分类号	H01L21/322;H01L21/324;C30B33/00	主分类号	H01L21/322
代理机构		代理人
主权项
地址

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