| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device such as a light-emitting device or a diode in which a group III-V nitride single crystal film excellent in crystallinity is grown on a substrate in which a group III-V nitride, a lattice constant, and a coefficient of thermal expansion are matched. <P>SOLUTION: The semiconductor device is provided with: a group III nitride single crystal substrate 11 containing a transition metal of 10 ppb or higher and 0.1 mol% or lower, and at least one type of group III-V nitride single crystal films 12, 14 and 15 selected from a gallium nitride, an aluminum nitride, a boron nitride, an indium nitride and a mixed crystal composed of these nitrides which are formed on the single crystal substrate 11 through a low-temperature grown buffer layer 13 of the group III-V nitride. The transition metal or its nitride or oxide does not deposit in the substrate 11. <P>COPYRIGHT: (C)2008,JPO&INPIT |
