| 摘要 |
An organic polymer film, e.g. aromatic polyimide resin 6, having a moisture permeability of 1 x 10<-7>g.cm/cm<2>.hr or less is formed between the encapsulating resin 8 of a semiconductor device, and a moisture absorption member 2, 3, 4 such as phosphosilicate glass or SiO2 film, a hygroscopic polyimide film or a corrodible aluminium wiring conductor. The low moisture permeability film is formed on the surface of the semiconductor device either directly or through the medium of other material, and may serve as a protective or possivation film, an alpha -ray shield or an inter- layer insulating film. Methods for the production of the low moisture permeability film are described, and the use of fillers such as silica or alumina is disclosed. <IMAGE> |
