| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor dynamic quantity sensor, which reduces corner undercuts in the sensor as far as possible to make the sensor superior in a miniaturization. SOLUTION: A semiconductor acceleration sensor is manufactured into a structure, wherein a silicon nitride film is subjected to anisotropic etching work in a state that a prescribed region on a single crystal silicon substrate with the face <100> as its surface is coated with the silicon nitride film, whereby the covered region is constituted as the thick-walled part of the sensor and the exposed region on the silicon substrate is used as the thin-walled part of the sensor. At this time, a mask 23 for patterning the silicon nitride film into a prescribed shape is aligned with the square part of a rectangular pattern 27 in the plane direction <011> and the plane direction <01 bar 1> and is provided with lectangular shape compensating parts 28a, 28b, 28c and 28d of different lengths in each direction and an anisotropic etching is performed using a pattern of the silicon nitride film patterned into the prescribed shape using this mask 23. |
