| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which a source and a drain are silicided and junction leakage is suppressed to be low while maintaining a junction position of a shallow source and a drain, and a semiconductor device manufactured by the method. <P>SOLUTION: In the manufacturing method of the semiconductor device provided with a MISFET (metal insulator semiconductor field effect transistor), a gate insulating film of the MISFET is formed on the surface of a silicon substrate 1100, and a gate electrode is formed on the gate insulating film. On both sides of the gate electrode, a plurality of nickel silicide (NiSi) regions 501a and 502a which are formed on a silicon surface having ä110} plane orientations present rectangular shapes comprising long sides vertical to a <100> direction on the silicon surface and short sides parallel with the <100> direction, whose width is≤0.5μm, and constitute a part of the source and drain regions of the MISFET are formed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
