| 发明名称 |
III-nitride light emitting device including porous semiconductor |
| 摘要 |
A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire. |
| 申请公布号 |
US9385265(B2) |
申请公布日期 |
2016.07.05 |
| 申请号 |
US201113084679 |
申请日期 |
2011.04.12 |
| 申请人 |
LUMILEDS LLC |
发明人 |
Wierer, Jr. Jonathan J.;Epler John E. |
| 分类号 |
H01L33/00;H01L33/16;H01L21/02;H01L33/12;H01L33/38 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region; a porous III-nitride region; a III-nitride layer comprising indium disposed between the light emitting layer and the porous III-nitride region; a mask layer disposed between the porous III-nitride region and the III-nitride layer comprising indium; and a plurality of openings formed in the mask layer. |
| 地址 |
San Jose CA US |
