Method of production for a Bi-CMOS element using grooves (slots)

摘要

A method of production for a Bi-CMOS element using grooves is described, using which it is possible to produce a bipolar element and CMOS element simultaneously on a substrate by grooving or isolating etching. In the method, an oxide layer is grown, an enclosed N<+> layer is formed, an epitaxial layer of the n-type is grown after removing the oxide layer, another oxide layer is grown, a multiplicity of insulation regions is formed, by allowing a boron impurity to diffuse in, the base, collector, emitter and drain regions are formed, the grooves are formed after the oxide layer has been removed, an oxide layer is grown after inversion of the epitaxial layer, the electrode window is opened and a metal, such as, for example, aluminium, is deposited, in order thus to provide a connection for the electrode terminals of the base, of the emitter and of the collector of the bipolar element as well as the drain, source and gate electrodes of the CMOS element.