Cathodic sputtering device

摘要

In a device for introducing materials onto a substrate (15) arranged in a vacuum chamber (16, 17), having an electron filter (9) which is arranged in a separate generator chamber (37) which corresponds with the vacuum chamber (16, 17) and forms the anode (11), and which electron filter (9) generates a large-area plasma column (S) after introduction of a process gas into the generator chamber (37), which plasma column (S) is channelled by the interaction of magnets (64, 30, 21, 21', 44) between electron emitters (9) and a target arrangement (7), the positive ions can be accelerated onto the target (7) by application of an adjustable negative voltage, from which the sputtered metal atoms travel onto the substrate (15). The target arrangement (7) is furthermore arranged in immediate proximity to that end of the connecting tube (19) extending the process chamber (37) which lies opposite the electron emitter (9), a magnet (106) lying close to the substrate (15) producing splitting and deviation of the separated plasma stream (S2). <IMAGE>