| 发明名称 |
P-TYPE GaN LAYER MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD UTILIZING P-TYPE GaN LAYER MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a p-type GaN layer which is a p-type GaN layer having a smooth surface and a low resistance value. value, where an electrode formed on the p-type GaN layer can have a lower contact resistance.SOLUTION: In a p-type GaN layer manufacturing method of manufacturing a p-type GaN layer on an AlGaN(0<X≤1) single crystal layer by metal organic chemical vapor deposition using a carrier gas containing a nitrogen gas, the p-type GaN layer is grown under a condition where a volume flow rate of the nitrogen gas in the carrier gas is not less than 0.1 and less than 0.5, and a growth rate is within a range of 0.03-0.35 μm/h.SELECTED DRAWING: Figure 1 |
| 申请公布号 |
JP2016164905(A) |
申请公布日期 |
2016.09.08 |
| 申请号 |
JP20150044182 |
申请日期 |
2015.03.06 |
| 申请人 |
TOKUYAMA CORP |
发明人 |
FURUYA TAISHI;OBATA TOSHIYUKI;KINOSHITA TORU |
| 分类号 |
H01L21/205;C23C16/30;C23C16/34;C30B25/16;C30B29/38;H01L33/32;H01L33/36 |
主分类号 |
H01L21/205 |
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