发明名称 BEVELING METHOD OF WAFER
摘要 PROBLEM TO BE SOLVED: To reduce the breakage, chipping, etc., of a wafer by a method wherein specific quantities of two kinds of diamond particles which contain extra-fine particles and whose average particle diameters are different from each other are mixed and contained in a whetstone. SOLUTION: In the beveling process of a wafer 1, the circumferential edge of the wafer 1 is pressed against a rotating whetstone 2 such as a trapezoidal whetstone while the wafer 1 is made to rotate to bevel the edge. A beveling angle is about 22±5 deg.. A whetstone which contains 5-30wt.% of extra-fine diamond particles whose average particle diameter is 3-18μm and, further, contains 70-95wt.% of diamond particles whose average particle diameter is 5-30μm is used in the whetstone 2 for beveling. By using the whetstone in the beveling process, the dimension of a broken layer produced by the beveling can be suppressed to be less than several microns while the grinding capability can be maintained, so that a strong wafer which has an excellent mechanical strength and heat-resistant propeties can be obtained.
申请公布号 JPH09181021(A) 申请公布日期 1997.07.11
申请号 JP19950335466 申请日期 1995.12.22
申请人 TOSHIBA CORP 发明人 KOMI TADAO
分类号 H03H3/08;H01L21/304;(IPC1-7):H01L21/304 主分类号 H03H3/08
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