发明名称 REDUNDANCY CELL RECODING CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To dissolve an address decoding error by generating a power-up pulse at the time of starting a power supply and controlling the generating of a switching control signal according to the pulse. SOLUTION: A power-up pulse generator 30 generates a power-up pulse and a transistor MN2 to be connected in between a master fuse MF and the ground is a switching transistor responding to the power-up pulse. The fuse and the transistor MN2 transmit a switching control signal to a driving part a consisting of an MP1, an MP2 and an MN1. Even when the master fuse MF is not cut completely, the switching control signal becomes a logical low when a logical high is impressed on the gate of the transistor MN2. Thus, the current of a fixed level is supplied to the output end of a comparator 20 and the decoded output of the comparator 20 is normally performed.</p>
申请公布号 JPH10144090(A) 申请公布日期 1998.05.29
申请号 JP19970299136 申请日期 1997.10.30
申请人 SAMSUNG ELECTRON CO LTD 发明人 KIN SHORAI;KIN SHOEI;BOKU KITETSU
分类号 G11C29/04;G11C5/14;G11C11/413;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/04
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