| 摘要 |
A semiconductor device having reduced interconnect delay and increased interconnect reliability and a method of manufacturing the same are provided. A plurality of interconnects 12a through 12f are formed on a base insulating layer 10 with different interconnect pitches P1 through P3. Next, an adhesion inhibiting layer inhibiting adhesion to an interlayer insulating layer 16 formed on the interconnects is formed in the space between adjacent interconnects of a smaller interconnect pitch in which space the interconnect delay is predicted to exceed a predetermined value due to interconnect design. In a formed semiconductor device 18, gaps of a small dielectric constant are formed in the spaces between interconnects of the smaller interconnect pitches (parts C), while an insulating film is buried selectively in the spaces between interconnects of the larger interconnect pitches (parts A and B). <IMAGE> |
