METHOD FOR FORMING ALIGNMENT LAYER, METHOD FOR MANUFACTURING CRYSTAL, SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality crystal in high yield without generating cracks.

SOLUTION: A first thin film 2 is formed on a single crystal substrate 1; the surface of the first thin film 2 is rubbed to form a friction alignment layer 3; a second thin film is deposited on the friction alignment layer 3 to form a deposited alignment layer 4; and a crystal is grown thereon. The single crystal substrate 1 is made of a Si substrate having the crystal plane direction of (111). The thickness of the friction alignment layer 3 is 1 to 20 mm and in the forming step of the friction alignment layer, the first thin film 2 is rubbed with diamond, sapphire or SiC.

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