METHOD FOR FORMING AN ALUMINUM SCHOTTKY JUCTION IN P-TYPE SILICON BOARD

摘要

PURPOSE: A preparing method of a Schottky junction on a P-type silicon plate is provided to prevent yield due to a high leakage current by increasing a Schottky barrier. CONSTITUTION: A natural oxide film on a P-type silicon plate(5) is removed by treating it with fluoric acid and ion-removed pure water. The surface of the silicon plate(5) is activated by treating with 1:3-1:4(volume ratio) mixture solution of dense hydrochloric acid and hydrogen peroxide. Then, a high-purity aluminum film is deposited on the silicon plate(5). The treatment of hydrochloric acid and hydrogen peroxide changes the surface nature of the P-type silicon plate(5) and a Schottky junction with improved electric barrier is formed.