| 摘要 |
PROBLEM TO BE SOLVED: To allow indirect observation under the condition where a desired voltage is impressed to a diffusion area of a sample surface part observed actually, without affected by sample structure, when a state of a local depletion layer in the diffusion area of a semiconductor sample is observed by an SCM. SOLUTION: The sample formed with an insulation film 105 on a surface where upper faces of the diffusion area 103, a well area 102 and a silicon substrate 101 are exposed is prepared by working a semiconductor device. A probe 111 for a cantilever 110 is made to contact on the insulation film of the surface of the diffusion area of the sample, a probe 112 for the probe is made to contact with the well area of the sample, a direct current bias of a prescribed voltage is impressed between the two probes under the condition therein, and a capacity change between the two probes with respect to a change of a voltage amplitude when an alternating voltage is impressed is detected therein, so as to observe indirectly the state of the local depletion layer in the diffusion area.
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